Semiconductor light emitting device

A semiconductor light emitting device comprising:

• a semiconductor layer having a first surface, a second surface provided on opposite side from the first surface, and a third surface provided on the opposite side from the first surface with a step difference with respect to the second surface, the semiconductor layer including a light emitting layer between the first surface and the third surface;
• a first electrode in contact with the second surface;
• a second electrode provided in a plane of the third surface, including a contact part in contact with the third surface and an end part not in contact with the third surface, the second electrode containing silver;
• an insulating film provided between the end part of the second electrode and the third surface;
• a first interconnect part connected to the first electrode;
• and
• a second interconnect part connected to the second electrode,
• a contact area of the insulating film and the third surface being smaller than a contact area of the contact part of the second electrode and the third surface.