Indirect band gap light emitting device

An indirect band gap light emitting device comprising:

• a first body of non-monocrystalline indirect band gap semiconductor material;
• a first region of the first body with a first doping kind and a first doping concentration;
• a second region of the first body with a second doping kind and a second doping concentration;
• at least one junction formed between the first region and the second region;
• a terminal arrangement connected to the first body and arranged to reverse bias the junction so as to emit light;
• and
• a substrate, whereby the first body is formed integrally as part of the substrate and whereby the first body is formed from a deposited layer of semiconductor to form an integral part of the substrate.

A method of manufacturing an indirect band gap light emitting device, the method comprising:

• depositing a layer of non-monocrystalline indirect band gap semiconductor material on a substrate to form an integral part of the substrate, the deposited layer forming a first body;
• doping a first region of the first body with a first doping kind and a first doping concentration;
• doping a second region of the first body with a second doping kind and a second doping concentration;
• forming at least one junction between the first region and the second region;
• and
• connecting a terminal arrangement to the first body, the terminal arrangement being arranged to reverse bias the junction so as to emit light.