Non-linear fin-based devices

An apparatus comprising:

• a non-planar fin having first, second, and third portions each having major and minor axes and each being monolithic with each other;
• wherein (a) the major axes of the first, second, and third portions are parallel with each other, (b) the major axes of the first and second portions are non-collinear with each other, (c) the first portion includes a node of a transistor selected from the group comprising source, drain, or channel, (d) the second portion includes a node of a transistor selected from the group comprising source, drain, or channel, (e) the third portion includes a node of a transistor selected from the group comprising source, drain, or channel, and (f) the first, second, and third portions are included in at least one finFET;
• wherein the first portion includes a channel coupled to a single common gate contact;
• wherein the second portion includes a channel coupled to the single common gate contact;
• wherein the channels of the first and second portions do not directly contact each other.