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US 2019/0097056 A1Published application
Semiconductor device having fins and method of fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShu-Hao KUO, Jung-Hao CHANG, Chao-Hsien HUANG, Li-Te LIN, Kuo-Cheng CHING
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Abstract
A device includes a semiconductor substrate, a first fin arranged over the semiconductor substrate, and an isolation structure. The first fin includes an upper portion, a bottom portion, and an insulator layer between the upper portion and the bottom portion. A top surface of the insulator layer is wider than a bottom surface of the upper portion of the first fin. The isolation structure surrounds the bottom portion of the first fin.
Claims20
A method, comprising:
- bonding a first semiconductor substrate onto a second semiconductor substrate with an insulator layer between the first semiconductor substrate and the second semiconductor substrate;
- etching the first semiconductor substrate to formed an upper portion of a fin, wherein a first portion of the insulator layer is exposed by etching the first semiconductor substrate;
- depositing a protection layer over the upper portion of the fin and over a top surface of the first portion of the insulator layer using an atomic layer deposition process;
- etching first portions of the protection layer over a top surface of the upper portion of the fin and the top surface of the first portion of the insulator layer, wherein a second portion of the protection layer remains on a side surface of the upper portion of the fin;
- etching the first portion of the insulator layer, wherein a second portion of the insulator layer remains under the upper portion of the fin;
- and
- etching the second semiconductor substrate to form a bottom portion of the fin under the second portion of the insulator layer.
4 more elements
A method, comprising:
- bonding a first semiconductor substrate onto a second semiconductor substrate with an insulator layer between the first semiconductor substrate and the second semiconductor substrate;
- etching a first portion of the first semiconductor substrate and a first portion of the insulator layer until the second semiconductor substrate is exposed, wherein a second portion of the first semiconductor substrate and a second portion of the insulator layer remain over the second semiconductor substrate;
- epitaxially growing an epitaxy layer over the second semiconductor substrate;
- etching the second portion of the first semiconductor substrate to form an upper portion of a first fin and etching the epitaxy layer to form an upper portion of a second fin, wherein a first sub-portion of the second portion the insulator layer is exposed by etching the second portion of the first semiconductor substrate;
- depositing a protection layer over the upper portion of the second fin using an atomic layer deposition process;
- etching the first sub-portion of the second portion of the insulator layer, wherein a second sub-portion of the second portion of the insulator layer remains under the upper portion of the first fin;
- and
- etching the second semiconductor substrate to form a bottom portion of the first fin under the second sub-portion of the second portion of the insulator layer and a bottom portion of the second fin under the upper portion of the second fin.
5 more elements
A device, comprising:
- a semiconductor substrate;
- a first fin over the semiconductor substrate, the first fin comprising an upper portion, a bottom portion, and an insulator layer between the upper portion and the bottom portion, wherein a top surface of the insulator layer is wider than a bottom surface of the upper portion of the first fin;
- and
- an isolation structure surrounding the bottom portion of the first fin.
1 more element
Dependencies are inferred from the claim text.