Integrated circuit device
AssigneeSamsung Electronics Co., Ltd.
InventorsMun-hyeon KIM, Sung-man Whang, Chang-woo NOH, Dong-won KIM, Han-su OH
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Abstract
An integrated circuit device includes a base burying insulating film covering a lower side wall of a fin-type active region on a substrate, an isolation pattern having a top surface higher than a top surface of the base burying insulating film, and a gate line covering a channel section of the fin-type active region. The gate line has an upper gate covering an upper portion of the channel section and a lower gate protruding from the upper gate toward the substrate and filling a space between a lower side wall of the channel section and an upper side wall of the isolation pattern.
Claims15
An integrated circuit device, comprising:
- a fin-type active region protruding from a substrate and extending longitudinally in a first horizontal direction;
- a base burying insulating film including a vertical extension and a horizontal extension on the substrate, the vertical extension covering a lower side wall of the fin-type active region and having a first top surface at a first level, and the horizontal extension being integrally connected to the vertical extension and covering a top surface of the substrate;
- an isolation pattern covering a side wall of the vertical extension on the horizontal extension and having a second top surface at a second level, the second level being higher than the first level;
- and
- a gate line having an upper gate and a lower gate, the upper gate extending in a second horizontal direction crossing the first horizontal direction to cover an upper portion of a channel section of the fin-type active region and the second top surface of the isolation pattern, and the lower gate protruding from the upper gate toward the substrate and filling a space on the first top surface between a lower portion of the channel section and an upper side wall of the isolation pattern.
An integrated circuit device, comprising:
- a substrate having an active region;
- a plurality of fin-type active regions protruding from the active region and extending in a first horizontal direction in parallel with each other;
- a base burying insulating film including a plurality of vertical extensions and a horizontal extension, the plurality of vertical extensions each filling a space between adjacent fin-type active regions among the plurality of fin-type active regions or covering a side wall of each of the plurality of fin-type active regions, and the horizontal extension being integrally connected to an outermost vertical extension among the plurality of vertical extensions and covering a top surface of the active region;
- an isolation pattern separated from the fin-type active regions with the outermost vertical extension therebetween and having an upper side wall facing a channel section of an outermost fin-type active region among the plurality of fin-type active regions;
- and
- a gate line extending in a second horizontal direction crossing the first horizontal direction to cover channel sections of the respective fin-type active regions, the base burying insulating film, and the isolation pattern,
- wherein the gate line includes an upper gate covering an upper portion of the channel section of the outermost fin-type active region and a first lower gate filling a space between the upper side wall of the isolation pattern and a lower portion of the channel section of the outermost fin-type active region and protruding from the upper gate toward the substrate.
Dependencies are inferred from the claim text.