Semiconductor structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCHAO-CHING CHENG, CHEN-FENG HSU, YU-LIN YANG, JUNG-PIAO CHIU, TZU-CHIANG CHEN
Life of this patent
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Abstract
A semiconductor structure includes a substrate, a first fin structure disposed over the substrate, a second fin structure disposed over the substrate, and an isolation structure disposed between the first fin structure and the second fin structure and electrically isolating the first fin structure from the second fin structure. The isolation structure includes a first thickness, a second thickness and a third thickness different from each other.
Claims21
A semiconductor structure comprising:
- a substrate;
- a semiconductor layer disposed over a portion of the substrate;
- a first fin structure disposed over the semiconductor layer and in contact with the semiconductor layer;
- a second fin structure disposed over the substrate and in contact with the substrate;
- and
- an isolation structure disposed between the first fin structure and the second fin structure and electrically isolating the first fin structure from the second fin structure, wherein the isolation structure comprises a first thickness measured from a top surface to a first bottom surface, a second thickness measured from the top surface to a second bottom surface and a third thickness measured from the top surface to a third bottom surface, wherein the first thickness, the second thickness and the third thickness are different from each other, and the first bottom surface, the second bottom surface and the third bottom surface are at different levels.
A semiconductor structure comprising:
- a substrate;
- a semiconductor layer disposed over a portion of the substrate;
- a first fin structure disposed over the semiconductor layer and in contact with the semiconductor layer;
- a second fin structure disposed over the substrate and in contact with the substrate;
- and
- an isolation structure disposed between the first fin structure and the second fin structure and electrically isolating the first fin structure from the second fin structure, wherein the isolation structure comprises a top surface, at least a first bottom surface, and a second bottom surface, wherein the top surface, the first bottom surface and the second bottom surface are parallel to each other, the first bottom surface is in contact with the substrate, and the second bottom surface is spaced apart from the substrate.
15-20. (canceled)
A semiconductor structure comprising:
- a substrate;
- a semiconductor layer disposed over a portion of the substrate;
- a first fin structure disposed over the semiconductor layer and in contact with the semiconductor layer;
- a second fin structure disposed over the substrate and in contact with the substrate;
- an isolation structure disposed between the first fin structure and the second fin structure and electrically isolating the first fin structure from the second fin structure;
- and
- a dielectric spacer under a portion of the isolation structure,
- wherein the isolation structure comprises at least a first bottom surface, a second bottom surface, and a third bottom surface between the first bottom surface and the second bottom surface, the first bottom surface, the third bottom surface and the second bottom surface form a stepped bottom, the first bottom surface is in contact with the substrate, and at least a portion of the third bottom surface is spaced apart from the substrate by the dielectric spacer.
Dependencies are inferred from the claim text.