Method of Removing an Etch Mask

A method, comprising:

• forming a patterned etch mask over a target layer;
• patterning the target layer using the patterned etch mask as a mask to form a patterned target layer, the patterning causing a first residue to form on the patterned target layer;
• cleaning the patterned target layer in a first cleaning process, the first cleaning process removing a first portion of the first residue, the first cleaning process using a first cleaning solution;
• cleaning the patterned target layer in a second cleaning process, the second cleaning process removing the patterned etch mask and altering the second portion of the first residue into a second residue, the second cleaning process using a second cleaning solution different than the first cleaning solution;
• and
• performing a static discharge process on the patterned target layer.

A method, comprising:

• patterning a mandrel layer to form at least one opening therein;
• forming first spacers on sidewalls of the at least one opening;
• transferring a pattern of the first spacers to a mask layer to form a patterned mask layer;
• patterning a target layer using the patterned mask layer as a mask to form a patterned target layer, wherein following the patterning of the target layer a first residue is disposed on sidewalls of the patterned target layer;
• removing the patterned mask layer using a mask removal process, the mask removal process forming a second residue on the sidewalls of the patterned first target layer, the second residue comprising a condensate of the first residue;
• and
• removing the second residue using a residue removal process, wherein the residue removal process and mask removal process use different cleaning solutions.