Field-effect transistor and method therefor

A transistor comprising:

• a trench formed in a semiconductor substrate;
• a gate electrode formed in the trench, a first edge of the gate electrode proximate to a first sidewall of the trench;
• a first field plate formed in the trench, the first field plate located between a second edge of the gate electrode and a second sidewall of the trench;
• and
• a second field plate formed in the trench, the second field plate located between a second edge of the gate electrode and a second sidewall of the trench;
• wherein the first field plate and the second field plate each include a bottom edge that extends deeper in the trench closer to a bottom of the trench than a bottom edge of the gate electrode.

A transistor comprising:

• a trench formed in a semiconductor substrate;
• a gate electrode formed in the trench, a first edge of the gate electrode proximate to a first sidewall of the trench;
• a first field plate formed in the trench, the first field plate located between a second edge of the gate electrode and a second sidewall of the trench;
• and
• a second field plate formed in the trench, the second field plate located between a second edge of the gate electrode and a second sidewall of the trench;
• a source region formed in the semiconductor substrate having at least a portion of the source region adjacent to the first sidewall, and a drain region formed in the semiconductor substrate having at least a portion of the drain region adjacent to the second sidewall.