Semiconductor structure and associated fabricating method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJIA-RUI LEE, KUO-MING WU, YI-CHUN LIN
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Abstract
A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; an isolation region adjacent to the drain region; a gate electrode over the substrate and further downwardly extends into the substrate, wherein a portion of the gate electrode below a top surface of the substrate abuts the isolation region; and a source region and a drain region formed in the substrate on either side of the gate structure. An associated method for fabricating the semiconductor structure is also disclosed.
Claims21
A semiconductor structure, comprising:
- a substrate;
- an isolation region in the substrate;
- a gate electrode over the substrate and further downwardly extends into the substrate, wherein a portion of the gate electrode below a top surface of the substrate abuts the isolation region;
- and
- a source region and a drain region formed in the substrate on either side of the gate electrode;
- wherein a sidewall of a portion of the gate electrode above the top surface of the substrate is coplanar with a sidewall of the portion of the gate electrode below the top surface of the substrate.
A semiconductor structure, comprising:
- a substrate;
- a gate electrode having a first portion and a second portion, the first portion being over a top surface of the substrate and the second portion being below the top surface of the substrate, and the second portion is isolated from the substrate by a dielectric region in the substrate;
- and
- a source region and a drain region formed in the substrate on either side of the gate electrode;
- wherein a sidewall of the first portion is coplanar with a sidewall of the second portion.
(canceled)
Dependencies are inferred from the claim text.