US 2019/0097043 A1 · SILICON CARBIDE SEMICONDUCTOR DEVICE

Abstract

A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate having an n-type drift layer, and a p-type well region formed in a surface portion of a part of the drift layer, an insulating film provided on the well region, a gate built-in resistor formed of polysilicon in contact with a surface of the insulating film, an interlayer insulating film formed on the gate built-in resistor, a gate contact wire that is connected to a gate pad and formed on the interlayer insulating film, a gate wire provided on the interlayer insulating layer so as to be apart from the gate contact wire, a first gate contact for electrically connecting the gate contact wire and the gate built-in resistor, and a second gate contact for electrically connecting the gate wire and the gate built-in resistor.

Claims19

Dependent claims

A silicon carbide semiconductor device comprising:

a silicon carbide semiconductor substrate having an n-type drift layer, and a p-type well region formed in a surface portion of a part of the drift layer;
an insulating film provided on the well region;
a gate built-in resistor formed of polysilicon in contact with a surface of the insulating film;
an interlayer insulating film formed on the gate built-in resistor;
a gate contact wire that is connected to a gate pad and formed on the interlayer insulating film;
a gate wire provided on the interlayer insulating layer so as to be apart from the gate contact wire;
a first gate contact for electrically connecting the gate contact wire and the gate built-in resistor;
and
a second gate contact for electrically connecting the gate wire and the gate built-in resistor.

6 more elements

Dependencies are inferred from the claim text.

Silicon carbide semiconductor device

Life of this patent

Silicon carbide semiconductor device

Life of this patent

Abstract

Claims19