Semiconductor device and a method for fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Lien HUANG, Meng-Chun CHANG
Life of this patent
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Abstract
A semiconductor device includes a substrate provided with an electronic device, an interlayer dielectric (ILD) layer formed over the electronic device, a wiring pattern formed on the ILD layer and a contact formed in the ILD layer and physically and electrically connecting the wiring pattern to a conductive region of the electronic device. An insulating liner layer is provided on sidewalls of the contact between the contact and the ILD layer. A height of the insulating liner layer measured from a top of the conductive region of the electronic device is less than 90% of a height of the contact measured between the top of the conductive region and a level of an interface between the ILD layer and the wiring pattern.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming an interlayer dielectric (ILD) layer over a substrate provided with an electronic device, thereby covering the electronic device;
- forming a contact opening in the ILD layer:
- forming an insulating liner layer in the contact opening;
- partially removing an upper portion of the insulating liner layer formed in the contact opening;
- and
- after the upper portion of the insulating liner layer is removed, forming a conductive material in the opening.
A method of manufacturing a semiconductor device including a first field effect transistor (FET) having a first gate, a first source and a first drain and a second FET having a second gate, a second source and a second drain, the first source and the second source being shared by the first FET and the second FET, the method comprising:
- forming an interlayer dielectric (ILD) layer over the first FET and the second FET;
- forming a first contact opening in the ILD layer over the first FET and a second contact opening in the ILD layer over the second FET;
- forming an insulating liner layer in the first and second contact openings;
- partially removing upper portions of the insulating liner layer formed in the first and second contact openings;
- and
- after the upper portions of the insulating liner layer are removed, forming a conductive material in the first and second openings.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first fin field effect transistor (FinFET) having a gate overlying a plurality of fin channels and plurality of sources and drains, each are adjacent to the plurality of fin channels, respectively;
- forming an interlayer dielectric (ILD) layer formed over the first FinFET;
- forming a contact opening in the ILD layer, thereby opening the plurality of sources;
- conformally forming an insulating liner layer in the contact opening;
- partially removing an upper portion of the insulating liner layer formed in the contact opening, and removing the insulating layer covering the plurality of sources, thereby exposing the plurality of sources;
- and
- after the upper portion of the insulating liner layer is removed, forming a conductive material in the opening on the plurality of exposed sources.
Dependencies are inferred from the claim text.