Semiconductor device and process of forming the same
AssigneeSumitomo Electric Device Innovations, Inc.
InventorTakuma NAKANO
Life of this patent
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Abstract
A semiconductor device type of field effect transistor (FET) primarily made of nitride semiconductor materials is disclosed. The FET includes a nitride semiconductor stack providing primary and auxiliary active regions and an inactive region surrounding the active regions; electrodes of a source, a drain, and a gate; an insulating film covering the electrodes and the semiconductor stack; and a field plate on the insulating film. A feature of the FET of the invention is that the field plate is electrically in contact with the auxiliary active region through the opening provided in the insulating film.
Claims11
A semiconductor device type of field effect transistor (FET) primarily made of nitride semiconductor materials, comprising:
- a nitride semiconductor stack having a primary active region, an auxiliary active region, and an inactive region surrounding the primary active region and the auxiliary active region;
- electrodes of a source, a drain, and a gate each provided on the nitride semiconductor stack in the primary active region;
- an insulating film that covers the electrodes and the nitride semiconductor stack exposed between the electrodes, the insulating film providing an opening in the auxiliary active region;
- and
- a field plate provided on the insulating film and overlapping with the gate electrode,
- wherein the field plate is electrically in contact with the auxiliary active region through the opening provided in the insulating film.
A process of forming a field effect transistor, the process comprising steps of:
- forming a semiconductor stack;
- forming a primary active region, an auxiliary active region, and an inactive region in the semiconductor stack, the inactive region surrounding the primary active region and the auxiliary active region;
- forming electrodes of a drain, a source, and a gate on the semiconductor stack in the primary active region;
- depositing an insulating film on the electrodes of the source, the drain, and the gate, and the semiconductor stack exposed between the electrodes;
- forming an opening in the insulating film in the auxiliary active region;
- forming a field plate on the insulating film such that the field plate overlaps with the gate electrode and makes in contact with the auxiliary active region through the opening in the insulating film.
Dependencies are inferred from the claim text.