Semiconductor device having fin structures

A semiconductor device structure, comprising:

• a well pick-up region formed in a semiconductor substrate;
• an active region formed adjacent to the well pick-up region in the semiconductor substrate;
• a first fin structure formed in a first region of the well pick-up region;
• a second fin structure formed in a first region of the active region, wherein the first region of the well pick-up region and the first region of the active region are doped with a first type of dopants;
• a third fin structure formed in a second region of the well pick-up region;
• and
• a fourth fin structure formed in a second region of the active region, wherein the second region of the well pick-up region and the second region of the active region are doped with a second type of dopants,
• wherein a distance between a first sidewall of the first fin structure and a third sidewall of the third fin structure is greater than a distance between a second sidewall of the second fin structure and a fourth sidewall of the fourth fin structure.

A semiconductor device structure, comprising:

• a semiconductor substrate having a well pick-up region and an active region adjacent to the well pick-up region;
• two first fin structures formed adjacent to each other in the well pick-up region, and spaced apart by a first distance;
• and
• two second fin structures formed adjacent to each other in the active region and spaced apart by a second distance,
• wherein the two first fin structures have different conductivity types and the two second fin structures have different conductivity types, and
• wherein the first distance is greater than the second distance.