Field effect transistor and process of forming the same
AssigneeSumitomo Electric Industries, Ltd.
InventorKen Nakata
Life of this patent
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Abstract
A process of forming a field effect transistor (FET) and a FET are disclosed. The process includes steps of forming a nitride semiconductor layer on a substrate; selectively growing an n+-region made of oxide semiconductor material on the nitrides semiconductor layer and subsequently depositing oxide film on the n+-region; rinsing the oxide film with an acidic solution; forming an opening in the oxide film to expose the oxide semiconductor layer therein; and depositing a metal within the opening such that the metal is in direct contact with the n+-region.
Claims15
A process of forming a field effect transistor (FET), comprising:
- forming a nitride semiconductor layer on a substrate;
- selectively growing an n+-region made of oxide semiconductor material on the nitride semiconductor layer and depositing oxide film on the n+-region;
- rinsing a surface of the oxide film with an acidic solution;
- forming an opening in the oxide film, the opening exposing the n+-region therein;
- and
- depositing a metal within the opening, the metal being in direct contact with the n+-region.
A filed effect transistor type (FET) of high electron mobility transistor (HEMT) primarily made of nitride semiconductor materials, the FET comprising:
- a substrate;
- a semiconductor stack including nitride semiconductor layers;
- a pair of recesses provided in a surface of the semiconductor stack;
- a pair of n+-regions provided within the respective recesses, the n+-regions being made of oxide semiconductor materials doped with n-type dopants by density higher than 1×1019 cm−3;
- a pair of protecting layers each made of oxide material, the protecting layers having respective openings and covering peripheries of the n+-regions;
- and
- a pair of electrodes provided within the opening in the protecting layers, the electrodes being in direct contact with the n+-regions.
Dependencies are inferred from the claim text.