Semiconductor device and method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, the method comprising:

• forming an insulating film on a first main surface of a semiconductor substrate;
• forming a contact hole penetrating the insulating film in a depth direction and reaching semiconductor substrate;
• forming a metal film from a surface of the insulating film and spanning a semiconductor part of the semiconductor substrate exposed in the contact hole, the metal film having high adhesiveness with the semiconductor part;
• forming a metal layer on a surface of the metal film so as to be embedded in the metal film in the contact hole;
• performing etch back of the metal layer, removing a part of the metal layer excluding a part embedded in the contact hole, and exposing the metal film;
• performing etch back of an exposed part of the metal film, and exposing the insulating film;
• irradiating a light ion or an electron beam on the semiconductor substrate;
• and
• performing heat treatment in a hydrogen atmosphere and recovering lattice defects generated by irradiating the light ion or the electron beam.