Trench Transistors and Methods with Low-Voltage-Drop Shunt to Body Diode
AssigneeMaxPower Semiconductor, Inc.
InventorsMohamed N. Darwish, Jun Zeng, Richard A. Blanchard
Life of this patent
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Abstract
Methods and systems for power semiconductor devices integrating multiple trench transistors on a single chip. Multiple power transistors (or active regions) are paralleled, but one transistor has a lower threshold voltage. This reduces the voltage drop when the transistor is forward-biased. In an alternative embodiment, the power device with lower threshold voltage is simply connected as a depletion diode, to thereby shunt the body diodes of the active transistors, without affecting turn-on and ON-state behavior.
Claims24
1-20. (canceled)
A power semiconductor device, comprising:
- one or more first trench-gated transistors, each having a portion of a first-conductivity-type source region, and a first gate electrode which is capacitively coupled to a first body region to selectably form a first channel region therein;
- one or more second trench-gated transistors, each having a portion of said first-conductivity-type source region, and a second gate electrode which is capacitively coupled to a second body region to selectably form a second channel region therein;
- at least one field plate electrode separating said trench-gated transistors;
- wherein said trench-gated transistors are integrated on a single semiconductor die;
- wherein said second body regions are deeper than said first body regions, and said second channel regions are longer than said first channel regions;
- and
- wherein each said first trench-gated transistor has a lower threshold voltage than each said second trench-gated transistor.
(canceled)
A power semiconductor device, comprising:
- one or more first trench-gated transistors, each having a portion of a first-conductivity-type source region, and a first gate electrode which is capacitively coupled to a first body region to selectably form a first channel region therein, and a drain region;
- one or more second trench-gated transistors, each having another portion of said first-conductivity-type source region, and a second gate electrode which is capacitively coupled to a second body region to selectably form a second channel region therein, and a drain region;
- wherein said trench-gated transistors are integrated on a single semiconductor die;
- wherein said second body regions are deeper than said first body regions, and said second channel regions are longer than said first channel regions;
- wherein said source regions are connected to a single common source electrode;
- wherein said drain regions are connected to a single common drain electrode;
- wherein said second gate electrodes are connected to a single common gate electrode;
- and
- wherein said first gate electrodes are connected to said common source electrode.
40-46. (canceled)
A power semiconductor device, comprising:
- a first and second gated transistor, integrated on a single semiconductor die, both having a first-conductivity-type source region and a gate electrode which is capacitively coupled to a body region to selectably form a channel region therein;
- wherein the channel region of said first gated transistor has a shorter spatial extent than does the channel region of said second gated transistor.
49-73. (canceled)
Dependencies are inferred from the claim text.