Semiconductor device and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorCheng-Hsien WU
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes: receiving a semiconductor structure, the semiconductor structure including: a fin structure; a dummy gate across over the fin structure to define a channel region of the fin structure; and a dummy dielectric layer separating the channel region of the fin structure from the dummy gate; removing the dummy gate and the dummy dielectric layer to expose the channel region of the fin structure; and forming a doped interfacial layer covering the channel region of the fin structure, in which the doped interfacial layer includes a dopant selected from the group consisting of Al, Hf, La, Sc, Y and a combination thereof.
Claims21
A method of manufacturing a semiconductor device, comprising:
- receiving a semiconductor structure, the semiconductor structure comprising:
- a fin structure;
- a dummy gate across over the fin structure to define a channel region of the fin structure;
- and
- a dummy dielectric layer separating the channel region of the fin structure from the dummy gate;
- removing the dummy gate and the dummy dielectric layer to expose the channel region of the fin structure;
- and
- forming a doped interfacial layer covering the channel region of the fin structure, wherein the doped interfacial layer comprises a dopant selected from the group consisting of Al, Hf, La, Sc, Y and a combination thereof.
10-20. (canceled)
A method of manufacturing a semiconductor device, comprising:
- forming a dummy gate dielectric layer over a channel region of a substrate;
- forming a dummy gate over the dummy gate dielectric layer;
- removing the dummy gate and a portion of the dummy gate dielectric layer to expose the channel region;
- forming an interfacial layer over the channel region;
- and
- increasing a dielectric constant of the interfacial layer.
A method of manufacturing a semiconductor device, comprising:
- forming first epitaxial layers and second epitaxial layers one above the other over a substrate;
- forming an interfacial layer over the first epitaxial layers and the second epitaxial layers;
- and
- doping the interfacial layer with at least one of La, Sc, and Y.
Dependencies are inferred from the claim text.