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US 2019/0097022 A1Published application
Method and structure to form vertical fin bjt with graded sige base doping
AssigneeInternational Business Machine Corporation
InventorsSeyoung Kim, Choonghyun Lee, Injo Ok, Soon-Cheon Seo
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Abstract
A device including a vertical fin bipolar junction transistor (BJT) with graded doping SiGe base with molecular layer doping (MLD), where a lower doped base is grown and a top emitter is formed and then additional late doping is provided on an Si layer on a side of the emitter and a method of manufacture thereof.
Claims20
A device comprising:
- a vertical fin bipolar junction transistor (BJT) with a graded doping SiGe base with molecular layer doping (MLD),
- wherein:
- a lower-doped base is grown as the graded doping SiGe base having a low doping characteristic at an upper portion of the lower-doped base and a high doping characteristic at a lower portion of the lower-doped base;
- a top emitter including Si is formed on the top portion of the lower-doped base;
- and
- the low doping characteristic at the upper portion of the lower-doped base is changed to a high doping characteristic via the MLD such that the too emitter and the upper portion and the lower portion of the lower-doped base include the high doping characteristic.
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A method of manufacturing a vertical fin bipolar junction transistor (BJT), the method comprising:
- selectively removing an oxide from a recess between fins at a top portion of an SiGe layer;
- performing doping around an Si layer and the recess around the SiGe layer;
- and
- drive in annealing to make the SiGe layer highly doped at the top portion of the SiGe layer and the Si layer.
1 more element
A method of manufacturing a vertical fin bipolar junction transistor (BJT), the method comprising:
- forming a spacer on a substrate between fins of the fin BJT surrounding an SiGe layer and a dummy Si layer;
- depositing an oxide between the spacer of adjacent fins;
- selectively removing the dummy Si layer to expose the SiGe layer between the spacer;
- performing doping between the spacer and to the SiGe layer;
- drive-in annealing to make the SiGe layer highly-doped;
- and
- depositing different types of Si layers in a gap between the spacer above the highly doped SiGe layer.
4 more elements
Dependencies are inferred from the claim text.