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US 2019/0097011 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Hao WU, Zhi-Chang LIN, Ting-Hung HSU, Kuan-Lun CHENG
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate, a first device with a horizontal-gate-all-around configuration, and a second device with a horizontal-gate-all-around configuration. The first device is over the substrate. The second device is over the first device. A channel of the first device is between the substrate and a channel of the second device.
Claims21
A semiconductor device comprising:
- a substrate;
- a first device with a horizontal-gate-all-around configuration over the substrate;
- and
- a second device with a horizontal-gate-all-around configuration over the first device, wherein a channel of the first device is between the substrate and a channel of the second device.
1 more element
A semiconductor device comprising:
- a substrate;
- a first semiconductor layer over the substrate;
- a first metal gate stack wrapping the first semiconductor layer;
- first epitaxy structures on opposite sides of the first semiconductor layer;
- a second semiconductor layer over the first semiconductor layer;
- a second metal gate stack wrapping the second semiconductor layer and separated from the first metal gate stack;
- and
- second epitaxy structures on opposite sides of the second semiconductor layer and separated from the first epitaxy structures.
5 more elements
16-20. (canceled)
A semiconductor device comprising:
- a first device including a first gate stack;
- a first gate spacer on a first sidewall of the first gate stack;
- a second device including a second gate stack;
- and
- a second gate spacer on a first sidewall of the second gate stack, the first sidewall of the second gate stack facing in the same direction as the first sidewall of the first gate stack and the first and the second gate spacers are integral with each other.
2 more elements
Dependencies are inferred from the claim text.