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US 2019/0097010 A1Published application
Gate all around device and fabrication thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYung-Chih WANG, Yu-Chieh LIAO, Tai-I YANG, Hsin-Ping CHEN
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Abstract
A device includes a nanowire, a gate dielectric layer and a gate electrode. The nanowire has a sidewall. The gate dielectric layer surrounds the nanowire. The gate electrode surrounds the gate dielectric layer and separated from the nanowire. The gate electrode comprises a sloped sidewall inclined with respect to the sidewall of the nanowire.
Claims21
A device, comprising:
- a nanowire having a sidewall;
- a gate dielectric layer surrounding the nanowire;
- and
- a gate electrode surrounding the gate dielectric layer and separated from the nanowire, the gate electrode comprising a sloped sidewall inclined with respect to the sidewall of the nanowire.
1 more element
A device, comprising:
- a conical frustum-shaped gate electrode;
- a nanowire extending through the conical frustum-shaped gate electrode, the nanowire comprising a sidewall non-parallel to an outer sidewall of the conical frustum-shaped gate electrode;
- and
- a gate dielectric layer between the conical frustum-shaped gate electrode and the nanowire.
1 more element
18-20. (canceled)
A device, comprising:
- a conductive layer;
- a gate electrode over the conductive layer;
- a doped nanowire through the conductive layer and the gate electrode;
- and
- a gate contact having a bottom surface in contact with the conductive layer and a sidewall in contact with the gate electrode, wherein the sidewall of the gate contact is inclined with respect to the bottom surface of the gate contact.
2 more elements
Dependencies are inferred from the claim text.