Semiconductor device and method for manufacturing the same
AssigneeRenesas Electronics Corporation
InventorHiroshi YANAGIGAWA
Life of this patent
Estimating the term…
Abstract
A semiconductor device which simplifies the manufacturing process while decreasing the width of separation between a first MOS transistor area and a second MOS transistor area, and a method for manufacturing the semiconductor device. A first MOS transistor and a second MOS transistor configure a bidirectional switch. The first MOS transistor and second MOS transistor each have a vertical trench structure. A first impurity region abuts on the side wall of a first gate trench of a first MOS transistor element outside the first MOS transistor area and is electrically coupled to a first source region.
Claims15
A semiconductor device having a bidirectional switch, comprising:
- a semiconductor substrate having a first surface and a second surface opposite to each other and having a first gate trench extending from the first surface toward the second surface;
- a first transistor element which includes a first drain region of a first conductivity type located in the second surface, a first source region of the first conductivity type located in the first surface, and a first gate electrode located inside the first gate trench and is included in the bidirectional switch;
- and
- a first impurity region of a second conductivity type which abuts on a side wall of the first gate trench outside an area for the first transistor element and is electrically coupled to the first source region.
A method for manufacturing a semiconductor device having a bidirectional switch, comprising the steps of:
- forming a semiconductor substrate having a first surface and a second surface opposite to each other and having a first gate trench extending from the first surface toward the second surface;
- forming a first transistor element which includes a first drain region of a first conductivity type located in the second surface, a first source region of the first conductivity type located in the first surface, and a first gate electrode located inside the first gate trench and is included in the bidirectional switch;
- and
- forming a first impurity region of a second conductivity type which abuts on a side wall of the first gate trench outside an area for the first transistor element and is electrically coupled to the first source region.
Dependencies are inferred from the claim text.