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US 2019/0097005 A1Published application
Semiconductor Device Having Termination Trench
AssigneeInfineon Technologies Austria AG
InventorsOliver Blank, Franz Hirler, Ralf Siemieniec, Li Juin Yip
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Abstract
A semiconductor device comprises a semiconductor substrate structure comprising a cell region and an edge termination region surrounding the cell region. Further it comprises a plurality of needle-shaped cell trenches within the cell region reaching from a surface of the semiconductor substrate structure into the substrate structure and an edge termination trench within the edge termination region surrounding the cell region at the surface of the semiconductor substrate structure.
Claims20
A semiconductor device comprising:
- a semiconductor substrate structure comprising a cell region and an edge termination region;
- a plurality of cell trenches within the cell region extending from a surface of the semiconductor substrate structure into the semiconductor substrate structure, the plurality of cell trenches each comprising an insulation layer;
- and
- a plurality of edge termination trenches within the edge termination region extending from a surface of the semiconductor substrate structure into the semiconductor substrate structure, the plurality of edge termination trenches each comprising an insulation layer,
- wherein the insulation layer of at least one of the plurality of cell trenches is thinner than the insulation layer of at least one of the plurality of edge termination trenches.
2 more elements
A semiconductor device comprising:
- a semiconductor substrate structure comprising a cell region and an edge termination region;
- a plurality of cell trenches within the cell region extending from a surface of the semiconductor substrate structure into the semiconductor substrate structure, the plurality of cell trenches each comprising a field plate;
- and
- a plurality of edge termination trenches within the edge termination region extending from a surface of the semiconductor substrate structure into the semiconductor substrate structure, the plurality of edge termination trenches each comprising a field plate,
- wherein an area of the field plate of at least one of the plurality of cell trenches is greater than an area of the field plate of at least one of the plurality of edge termination trenches.
2 more elements
Dependencies are inferred from the claim text.