Method for manufacturing semiconductor device
AssigneeRenesas Electronics Corporation
InventorsYuji FUJII, Kenichi Hisada, Yasunori Yanashita
Life of this patent
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Abstract
A method for manufacturing a semiconductor device includes the steps of forming a metal film (Ni film) over the bottom surface of a contact hole that exposes a portion including SiC at the bottom surface, and performing a heat treatment to form a silicide film at the bottom surface of the contact hole by a silicidation reaction of the metal film MT and the portion including SiC. Also, the heat treatment step is a step of irradiating a laser beam on the surface of a SiC substrate. As the heat treatment, annealing is performed using the laser beam that goes through SiC and is absorbed by metal (Ni and the like).
Claims19
A method for manufacturing a semiconductor device, comprising the steps of:
- (a) forming an element on a first surface side of a SiC substrate;
- (b) forming an interlayer insulation film over the element;
- (c) forming a contact hole where a portion including SiC is exposed to the bottom surface of the contact hole by removing the interlayer insulation film over a configuration section of the element;
- (d) forming a metal film containing a first metal over the bottom surface and the side surface of the contact hole and the interlayer insulation film;
- and
- (e) performing a heat treatment to form a silicide film of the first metal at the bottom surface of the contact hole by a silicidation reaction of the metal film and the portion including SiC,
- wherein the step (e) is a step for irradiating a laser beam to the first surface side of the SiC substrate.
A method for manufacturing a semiconductor device, comprising the steps of:
- (a) forming an element on a first surface side of a SiC substrate;
- (b) forming an interlayer insulation film over the element;
- (c) forming a contact hole where a portion including SiC is exposed to the bottom surface of the contact hole by removing the interlayer insulation film over a configuration section of the element;
- (d) forming a metal film containing a first metal over the bottom surface and the side surface of the contact hole and the interlayer insulation film;
- (e) performing a heat treatment to form a first silicide film of the first metal at the bottom surface of the contact hole in the SiC substrate;
- (f) removing a portion of a metal film unreacted in the step (e) out of the metal film;
- and
- (g) irradiating a laser beam to the first surface side of the SiC substrate to form a second silicide film of the first metal.
A method for manufacturing a semiconductor device, comprising the steps of:
- (a) forming an element on a first surface side of a SiC substrate;
- (b) forming an interlayer insulation film over the element;
- (c) forming a contact hole where a portion including SiC is exposed to the bottom surface of the contact hole by removing the interlayer insulation film over a configuration section of the element;
- (d) forming a metal film containing a first metal over the bottom surface and the side surface of the contact hole and the interlayer insulation film;
- (e) irradiating a laser beam to the first surface side of the SiC substrate to form a first silicide film of the first metal;
- (f) removing a portion of a metal film unreacted in the step (e) out of the metal film;
- and
- (g) irradiating a laser beam to the first surface side of the SiC substrate to form a second silicide film of the first metal.
Dependencies are inferred from the claim text.