Semiconductor devices and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung-Min SONG, Woo-Seok PARK, Jung-Gil YANG, Geum-Jong BAE, Dong-Il Bae
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Abstract
Semiconductor devices are provided. A semiconductor device includes a substrate and a gate structure on the substrate. The semiconductor device includes a channel on the substrate. The semiconductor device includes a source/drain layer on the channel. Moreover, the semiconductor device includes a spacer on a sidewall of the gate structure. The spacer includes a central portion overlapping the channel in a vertical direction, and a protrusion portion protruding from the central portion. Related methods of manufacturing semiconductor devices are also provided.
Claims30
A semiconductor device comprising:
- a substrate;
- channels spaced apart from each other in a vertical direction on an upper surface of the substrate;
- a gate structure on the channels;
- a first spacer on a sidewall of the gate structure, the first spacer comprising:
- a central portion overlapping the channels in the vertical direction;
- and
- a protrusion portion protruding from the central portion, the protrusion portion not overlapping the channels in the vertical direction;
- and
- a source/drain layer on sidewalls of the channels.
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A semiconductor device comprising:
- a substrate;
- a gate structure on the substrate;
- a channel extending through the gate structure;
- a source/drain layer on the channel;
- and
- a first spacer on a sidewall of the gate structure and electrically insulating the gate structure from the source/drain layer, the first spacer comprising:
- a central portion overlapping the channel in a vertical direction;
- and
- a protrusion portion protruding from the central portion, the protrusion portion not overlapping the channel in the vertical direction.
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A semiconductor device comprising:
- a substrate;
- a source/drain layer on the substrate;
- a first gate structure at a first side of the source/drain layer;
- a first channel extending through the first gate structure and connecting to the source/drain layer;
- and
- a first spacer on a sidewall of the first gate structure that faces the source/drain layer, the first spacer electrically insulating the first gate structure from the source/drain layer and comprising a first protrusion portion not overlapping the first channel in a vertical direction substantially perpendicular to an upper surface of the substrate.
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The semiconductor device of claim [[30]] 29, further comprising a third spacer on an upper portion of the first gate structure and on an uppermost one of the plurality of first channels,
- wherein the third spacer electrically insulates the upper portion of the first gate structure from the source/drain layer, and
- wherein the first and third spacers at least partially overlap with each other in the vertical direction.
-47. (canceled)
Dependencies are inferred from the claim text.