Semiconductor structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorTai-Yuan WANG
Life of this patent
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Abstract
A method includes forming a fin structure over a substrate; forming an isolation structure around the fin structure; etching the fin structure to form a recess in the fin structure; epitaxially growing a source drain structure in the recess; depositing a capping layer over a first portion of the source drain structure, in which the first portion of the source drain structure is over the isolation structure; recessing the isolation structure to expose a second portion of the source drain structure; and etching the second portion of the source drain structure, in which the first portion of the source drain structure remains over the isolation structure after etching the second portion of the source drain structure.
Claims20
A method comprising:
- forming a fin structure over a substrate;
- forming an isolation structure around the fin structure;
- etching the fin structure to form a recess in the fin structure;
- epitaxially growing a source drain structure in the recess;
- depositing a capping layer over a first portion of the source drain structure, wherein the first portion of the source drain structure is over the isolation structure;
- recessing the isolation structure to expose a second portion of the source drain structure;
- and
- etching the second portion of the source drain structure, wherein the first portion of the source drain structure remains over the isolation structure after etching the second portion of the source drain structure.
A method comprising:
- forming a fin structure over a substrate;
- forming an isolation structure around the fin structure;
- forming a first gate stack over the fin structure and the isolation structure;
- forming a spacer on a sidewall of the first gate stack;
- etching the isolation structure to expose a bottom surface of the spacer;
- and
- depositing a dielectric layer over the isolation structure such that the dielectric layer is in contact with the bottom surface of the spacer.
A method comprising:
- forming a fin structure over a substrate;
- forming an isolation structure around the fin structure;
- forming a gate stack over the fin structure and the isolation structure;
- etching the isolation structure to form a recess under the gate stack;
- and
- depositing a dielectric layer over the isolation structure such that a portion of the dielectric layer is deposited in the recess.
Dependencies are inferred from the claim text.