Method for manufacturing semiconductor device

Abstract

A method for manufacturing a semiconductor device comprises forming first groove, depositing, and ion-implanting. At the step of forming the first groove, the first groove is formed in a stacked body comprising a gallium nitride (GaN)-based first semiconductor layer containing an n-type impurity and a gallium nitride (GaN)-based second semiconductor layer stacked on the first semiconductor layer and containing a p-type impurity. The first groove has a bottom portion located in the second semiconductor layer. At the depositing step, a p-type impurity is deposited on side portion and the bottom portion of the first groove. At the ion-implanting step, a p-type impurity is ion-implanted into the first semiconductor layer through the first groove.

Dependencies are inferred from the claim text.