Semiconductor device and manufacturing method of the same

A semiconductor device comprising:

• a semiconductor substrate;
• a transistor section provided in the semiconductor substrate to have an emitter region of a first conductivity type on an upper surface side of the semiconductor substrate, and to have a collector region of a second conductivity type in an lower surface side of the semiconductor substrate;
• a diode section provided in the semiconductor substrate to have a cathode region of the first conductivity type on the lower surface side of the semiconductor substrate;
• an emitter electrode provided over the upper surface of the semiconductor substrate;
• and
• a protective film of which at least a part is provided over the emitter electrode, wherein
• the cathode region is not overlapped with the protective film in a surface parallel to the upper surface of the semiconductor substrate.

A manufacturing method of manufacturing a semiconductor device,

• the semiconductor device comprising:
• a semiconductor substrate;
• a transistor section provided in the semiconductor substrate to have an emitter region of a first conductivity type on an upper surface side of the semiconductor substrate, and to have a collector region of a second conductivity type in an lower surface side of the semiconductor substrate;
• a diode section provided in the semiconductor substrate to have a cathode region of the first conductivity type on the lower surface side of the semiconductor substrate;
• and
• a boundary section provided between the transistor section and the diode section in the semiconductor substrate to have the collector region in a back surface side of the semiconductor substrate, not having the emitter region on the upper surface side of the semiconductor substrate,
• wherein the transistor section has one or more gate trench portions which are provided from an upper surface of the semiconductor substrate to a position deeper than the emitter region, and to each of which a gate potential is applied, and
• an upper-surface-side lifetime reduction region is provided on the upper surface side of the semiconductor substrate in the diode section and a partial region of the boundary section, and the upper-surface-side lifetime reduction region is not provided in a region that is overlapped with the gate trench portion in the transistor section in a surface parallel to the upper surface of the semiconductor substrate, and
• the manufacturing method comprises:
• forming the upper-surface-side lifetime reduction region by introducing a lifetime killer from the upper surface side of the semiconductor substrate thereinto.