ULTRA-THIN-BODY GaN ON INSULATOR DEVICE
AssigneeInternational Business Machines Corporation
InventorsLukas Czornomaz, Herwig Hahn
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Abstract
An ultra-thin-body GaN-on-Insulator device and a method of manufacturing may be provided. The device comprises a front-end-of-line processed CMOS platform terminated with an interlayer dielectric material, a first bonding layer atop the interlayer dielectric material and an ultra-thin-body GaN-based hetero-structure terminated with a second bonding layer. The GaN-based hetero-structure is bonded with the second bonding layer to the first bonding layer of the CMOS platform building the ultra-thin-body GaN-on-Insulator device.
Claims20
An ultra-thin-body GaN-on-Insulator device comprising:
- a front-end-of-line processed CMOS platform terminated with an interlayer dielectric material;
- a first bonding layer atop said interlayer dielectric material;
- and
- an ultra-thin-body GaN-based hetero-structure terminated with a second bonding layer,
- wherein said GaN-based hetero-structure is bonded with said second bonding layer to said first bonding layer of said CMOS platform.
A method for bonding a GaN-based hetero-structure, said method comprising:
- depositing a first bonding layer atop a processed CMOS platform terminated with an interlayer dielectric material;
- depositing a second bonding layer atop a GaN-based hetero-structure;
- and
- bonding said second bonding layer onto said first bonding layer,
- thereby building directly a GaN-based hetero-structure atop said CMOS platform.
Dependencies are inferred from the claim text.