US 2019/0096899 A1Published application

Semiconductor device

AssigneeToshiba Memory Corporation

InventorsMasayoshi Tagami, Ryota Katsumata, Toru Matsuda, Yu Hirotsu, Naoki Yamamoto

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Abstract

According to one embodiment, a semiconductor device includes a stacked body, first, second, third, and fourth insulating bodies, first and second columnar portions. The stacked body includes a conductive layer and an insulating layer stacked alternately. The first, second, third and fourth insulating bodies, the first and second columnar portions are provided inside the stacked body. The second insulating body is at a position different from the first insulating body. The third insulating body is between the first and second insulating bodies. The fourth insulating body is between the first and second insulating bodies, and includes portions contacting the third insulating body and being separated from each other with the third insulating body interposed. The first columnar portion is between the first and fourth insulating bodies. The second columnar portion is between the second and fourth insulating bodies. The first and second columnar portions include a semiconductor layer.

Claims20

Dependent claims

A semiconductor device, comprising:

a stacked body including a conductive layer and an insulating layer, the conductive layer and the insulating layer being stacked alternately along a first direction;
a first insulating body extending in a second direction and being provided inside the stacked body along the first direction from an upper end of the stacked body to a lower end of the stacked body, the second direction crossing the first direction;
a second insulating body extending in the second direction and being provided inside the stacked body along the first direction from the upper end of the stacked body to the lower end of the stacked body, the second insulating body being at a position different from the first insulating body in a third direction, the third direction crossing the first direction and the second direction;
a third insulating body provided inside the stacked body along the first direction from the upper end of the stacked body to the lower end of the stacked body, the third insulating body being between the first insulating body and the second insulating body;
a fourth insulating body provided inside the stacked body along the first direction from the upper end of the stacked body partway through the stacked body, the fourth insulating body being between the first insulating body and the second insulating body, the fourth insulating body including a plurality of portions extending in the second direction, the plurality of portions contacting the third insulating body and being separated from each other in the second direction with the third insulating body interposed;
a first columnar portion provided inside the stacked body along the first direction from the upper end of the stacked body to the lower end of the stacked body, the first columnar portion being between the first insulating body and the fourth insulating body and including a semiconductor layer;
and
a second columnar portion provided inside the stacked body along the first direction from the upper end of the stacked body to the lower end of the stacked body, the second columnar portion being between the second insulating body and the fourth insulating body and including a semiconductor layer.

5 more elements

A semiconductor device, comprising:

a stacked body including a conductive layer and an insulating layer, the conductive layer and the insulating layer being stacked alternately along a first direction;
a first insulating body extending in a second direction and being provided inside the stacked body along the first direction from an upper end of the stacked body to a lower end of the stacked body, the second direction crossing the first direction;
a second insulating body extending in the second direction and being provided inside the stacked body along the first direction from the upper end of the stacked body to the lower end of the stacked body, the second insulating body being at a position different from the first insulating body in a third direction, the third direction crossing the first direction and the second direction;
a third insulating body provided inside the stacked body along the first direction from the upper end of the stacked body to the lower end of the stacked body, the third insulating body being between the first insulating body and the second insulating body;
a fourth insulating body provided inside the stacked body along the first direction from the upper end of the stacked body partway through the stacked body, the fourth insulating body being between the first insulating body and the second insulating body and including a first portion and a second portion extending in the second direction, the first portion and the second portion being separated from each other in the second direction with the third insulating body interposed;
a first columnar portion provided inside the stacked body along the first direction from the upper end of the stacked body to the lower end of the stacked body, the first columnar portion being between the first insulating body and the first portion and including a semiconductor layer;
a second columnar portion provided inside the stacked body along the first direction from the upper end of the stacked body to the lower end of the stacked body, the second columnar portion being between the second insulating body and the first portion and including a semiconductor layer;
a third columnar portion provided inside the stacked body along the first direction from the upper end of the stacked body to the lower end of the stacked body, the third columnar portion being between the first insulating body and the second portion and including a semiconductor layer;
and
a fourth columnar portion provided inside the stacked body along the first direction from the upper end of the stacked body to the lower end of the stacked body, the fourth columnar portion being between the second insulating body and the second portion and including a semiconductor layer;
a first bit line extending in the third direction and being electrically connected to the first columnar portion and the second columnar portion;
a second bit line extending in the third direction and being electrically connected to the third columnar portion and the fourth columnar portion;
and
a shunt line extending in the third direction, being disposed between the first bit line and the second bit line, and passing above the third insulating body.

11 more elements

A semiconductor device, comprising:

a stacked body including a conductive layer and an insulating layer, the conductive layer and the insulating layer being stacked alternately along a first direction;
a first insulating body extending in a second direction and being provided inside the stacked body along the first direction from an upper end of the stacked body to a lower end of the stacked body, the second direction crossing the first direction;
a second insulating body extending in the second direction and being provided inside the stacked body along the first direction from the upper end of the stacked body to the lower end of the stacked body, the second insulating body being at a position different from the first insulating body in a third direction, the third direction crossing the first direction and the second direction;
a third insulating body provided inside the stacked body along the first direction from the upper end of the stacked body to the lower end of the stacked body, the third insulating body being between the first insulating body and the second insulating body;
a fourth insulating body extending in the second direction and being provided inside the stacked body along the first direction from the upper end of the stacked body partway through the stacked body, the fourth insulating body being between the first insulating body and the second insulating body, the fourth insulating body being at a position overlapping the third insulating body in the third direction;
a first columnar portion provided inside the stacked body along the first direction from the upper end of the stacked body to the lower end of the stacked body, the first columnar portion being between the first insulating body and the fourth insulating body and including a semiconductor layer;
and
a second columnar portion provided inside the stacked body along the first direction from the upper end of the stacked body to the lower end of the stacked body, the second columnar portion being between the second insulating body and the fourth insulating body and including a semiconductor layer.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 15/948,057Filed 9 Apr 2018
Priority: JP 2017-18891828 Sep 2017
Published: 28 Mar 2019
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10B 41/35
Characterised by the memory core region: with a cell select transistor, e.g. NAND
H10B 41/27
With source and drain on different levels, e.g. with sloping channels: the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/10
EEPROM devices comprising charge-trapping gate insulators: characterised by the top-view layout
H10B 43/27
With source and drain on different levels, e.g. with sloping channels: the channels comprising vertical portions, e.g. U-shaped channels