Memory device and method of forming the same

A memory device, comprising:

• a conductive layer, coupled to a reference voltage level, the conductive layer having a first surface and a second surface facing opposite to the first surface;
• a first string of transistors, having a first terminal coupled to the first surface of the conductive layer, a second terminal coupled to a first bit line, and the first transistor string controlled by a plurality of first word line signals;
• and
• a second string of transistors, having a first terminal coupled to the second surface of the conductive layer, a second terminal coupled to a second bit line, and the second storage portion controlled by a plurality of second word line signals.

A memory device, comprising:

• a substrate;
• an interconnecting layer, disposed on the substrate;
• a conductive layer, coupled to a reference voltage level;
• and
• a storage portion, disposed on the interconnecting layer, wherein the storage portion comprises:
• a plurality of first storage strings, vertically coupled to a first surface of the conductive layer relative to a horizontal plane of the conductive layer, and
• a plurality of second storage strings, vertically coupled to a second surface of the conductive layer relative to the horizontal plane of the conductive layer, wherein the second surface is facing opposite to the first surface.