Semiconductor Device

A semiconductor device comprising:

• a semiconductor substrate having a main surface;
• first and second nonvolatile memory cells formed on the main surface of the semiconductor substrate;
• the first nonvolatile memory cell including a first memory MISFET for storing data, having a first memory gate electrode, and a first select MISFET for selecting the first memory MISFET, having a first select gate electrode;
• and
• the second nonvolatile memory cell including a second memory MISFET for storing data, having a second memory gate electrode, and a second select MISFET for selecting the second memory MISFET, having a second select gate electrode;
• wherein the first and second select gate electrodes extend in a first direction so as to be disposed next to each other in a second direction substantially perpendicular to the first direction in a plan view,
• wherein each of the first and second select gate electrodes has a first portion and a second portion;
• wherein the second portion is wider than the first portion in the second direction;
• wherein the first memory gate electrode extends in the first direction so as to be disposed along a sidewall of the first select gate electrode,
• wherein the second memory gate electrode extends in the first direction so as to be disposed along a sidewall of the second select gate electrode,
• wherein the first and second memory gate electrodes are disposed between the first select gate electrode and the second select gate electrode,
• wherein the first memory gate electrode has a first contact portion extending in the second direction to provide an electrical contact to a first interconnect, and the first contact portion is disposed adjacent the second portion of the first select gate electrode,
• wherein the second memory gate electrode has a second contact portion extending in the second direction to provide an electrical contact to a second interconnect, and the second contact portion is disposed adjacent the second portion of the second select gate electrode,
• wherein the first contact portion is spaced apart from the second contact portion in the first direction in the plan view, and
• wherein a first portion of the first contact portion and a second portion of the second contact portion are overlapped each other in the second direction in the plan view.