Semiconductor device having an inter-layer via (ilv), and method of making same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsung-Hsien HUANG, Hong-Chen CHENG, Cheng Hung LEE, Hung-Jen LIAO
Life of this patent
Estimating the term…
Abstract
A method of making a semiconductor device includes forming a first memory device, connecting a first word line to the first memory device, forming at least a first via, forming a second memory device, connecting a second word line to the second memory device, connecting a bit line to the first memory device and connecting the bit line to the second memory device by the first via. The first and second memory devices are separated by an inter-layer dielectric, and the first via connects the first memory device and the second memory device.
Claims2
A method of making a semiconductor device, the method comprising:
- forming a first memory device;
- connecting a first word line to the first memory device;
- forming at least a first via;
- forming a second memory device, wherein the first and second memory devices are separated by an inter-layer dielectric (ILD), and the first via connects the first memory device and the second memory device;
- connecting a second word line to the second memory device;
- connecting a bit line to the first memory device;
- and
- connecting the bit line to the second memory device by the first via.
Dependencies are inferred from the claim text.