Structure and Method for FinFET SRAM
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJhon Jhy Liaw
Life of this patent
Estimating the term…
Abstract
A method for semiconductor fabrication comprises forming mandrel patterns over a substrate using a first mask that defines the mandrel patterns. The first mask includes at least four first patterns that are spaced from each other in a first direction, wherein each of the first patterns extends lengthwise in a second direction orthogonal to the first direction. The method further comprises forming spacers on sidewalls of the mandrel patterns, removing the mandrel patterns, etching the substrate using the spacers as an etch mask, thereby forming fin lines in the substrate, and performing a fin cut process using a second mask to remove selective ones of the fin lines. The second mask includes at least four second patterns, each being an elongated shape extending lengthwise in the second direction.
Claims20
A method for semiconductor fabrication, comprising:
- forming mandrel patterns over a substrate using a first mask that defines the mandrel patterns, wherein the first mask includes at least four first patterns that are spaced from each other in a first direction, wherein each of the first patterns extends lengthwise in a second direction orthogonal to the first direction;
- forming spacers on sidewalls of the mandrel patterns;
- removing the mandrel patterns;
- etching the substrate using the spacers as an etch mask, thereby forming fin lines in the substrate;
- and
- performing a fin cut process using a second mask to remove selective ones of the fin lines, wherein the second mask includes at least four second patterns, each being an elongated shape extending lengthwise in the second direction, wherein the second patterns are spaced from each other in the first direction, and each of the second patterns covers a side of one of the first patterns when the first and second masks are superimposed, the side extending in the second direction.
A method, comprising:
- forming a dielectric layer over a substrate;
- forming mandrel patterns in the dielectric layer;
- forming spacers on sidewalls of the mandrel patterns;
- removing the mandrel patterns;
- etching the substrate using the spacers as an etch mask, thereby forming fin lines in the substrate;
- and
- performing a fin cut process on the fin lines using a mask that defines a cut window, wherein the cut window crosses a boundary of at least two static random-access memory (SRAM) cells, thereby forming shortened fin lines.
A method, comprising:
- forming mandrel patterns over a substrate;
- forming spacers on sidewalls of the mandrel patterns;
- removing the mandrel patterns;
- cutting selective portions of the spacers using a mask that defines a cut window, wherein the cut window crosses a boundary of at least two static random-access memory (SRAM) cells, thereby forming shortened spacers;
- and
- forming fin lines using the shortened spacers as an etch mask.
Dependencies are inferred from the claim text.