Embedded semiconductor region for latch-up susceptibility improvement
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien Yao HUANG, Yu-Ti Su
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Abstract
The present disclosure describes a metal-oxide-semiconductor field-effect transistor (MOSFET) device. The MOSFET device includes a first-type substrate, a deep-second-type well in the first-type substrate, a first-type well over the deep-second-type well, and a second-type well over the deep-second-type well. The second-type well and the deep-second-type well form an enclosed space that includes the first-type well. The MOSFET also includes an embedded semiconductor region (ESR) in a vicinity of the enclosed space. The ESR includes a dopant concentration lower than at least one of a dopant concentration of the first-type well, a dopant concentration of the second-type well, and a dopant concentration of the deep-second-type well.
Claims20
A metal-oxide-semiconductor field-effect transistor (MOSFET) device, comprising:
- a first-type substrate;
- a deep-second-type well in the first-type substrate;
- a first-type well over the deep-second-type well;
- a second-type well over the deep-second-type well, wherein the second-type well and the deep-second-type well form an enclosed space that includes the first-type well;
- and
- an embedded semiconductor region (ESR) in a vicinity of the enclosed space, the ESR comprising a dopant concentration lower than at least one of a dopant concentration of the first-type well, a dopant concentration of the second-type well, and a dopant concentration of the deep-second-type well.
A method for forming a metal-oxide-semiconductor field-effect transistor (MOSFET) device, comprising:
- providing a first-type substrate;
- doping a first portion of the first-type substrate to form a deep-second-type-well in the first-type substrate;
- doping a second portion of the first-type substrate to form a first-type well;
- doping a third portion of the first-type substrate to form a second-type well over the deep-second-type well, wherein the deep-second-type well and the second-type well form an enclosed space that includes the first-type well;
- and
- doping a fourth portion of the first-type substrate to form an embedded semiconductor region (ESR) in a vicinity of the enclosed space, the ESR comprising a dopant concentration lower than at least one of a dopant concentration of the first-type well, a dopant concentration of the second-type well, and a dopant concentration of the deep-second-type well.
A metal-oxide-semiconductor field-effect transistor (MOSFET) device, comprising:
- a first-type substrate;
- a deep-second-type well in the first-type substrate;
- a first-type well over the second-type well;
- an second-type well over the deep-second-type well, wherein the second-type well and the deep-second-type well form an enclosed space that includes the first-type well;
- an isolation structure between the first-type well and the second-type well;
- at least one MOSFET over the first-type well;
- and
- an embedded semiconductor region (ESR) surrounding the first-type well in the enclosed space and under the first-type well and the isolation structure, wherein the ESR comprises a dopant concentration lower than at least one of a dopant concentration of the first-type well, a dopant concentration of the second-type well, and a dopant concentration of the deep-second-type well.
Dependencies are inferred from the claim text.