Semiconductor device and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Te LIN, Wei-Yuan LU, Feng-Cheng YANG
Life of this patent
Estimating the term…
Abstract
A semiconductor device is provided. The semiconductor device includes a first transistor, a first interconnect structure, and a second transistor. The first transistor has a first gate length. The first interconnect structure is over the first transistor. The second transistor is over the first interconnect structure. The second transistor is electrically coupled to the first transistor through the first interconnect structure. The second transistor has a second gate length, and the first gate length is shorter than the second gate length.
Claims23
A semiconductor device, comprising:
- a first transistor;
- a first interconnect structure over the first transistor;
- and
- a second transistor over the first interconnect structure, the second transistor electrically coupled to the first transistor through the first interconnect structure, wherein the second transistor comprising an active region and a gate stack over the active region;
- and
- a dielectric structure, wherein the active region is embedded in the dielectric structure, and the dielectric structure has a top surface in a position lower than a top surface of the gate stack of the second transistor.
2-6. (canceled)
(canceled)
A semiconductor device, comprising:
- a first transistor;
- a first interconnect structure over the first transistor;
- a second transistor over the first interconnect structure;
- a third transistor over the first interconnect structure, wherein active regions of the second transistor and of the third transistor are made of different materials;
- and
- a dielectric layer having a first portion in contact with bottom surfaces of the active regions and a second portion extending upwards from the first portion, wherein the first portion and the second portion of the dielectric layer have the same material.
18-20. (canceled)
A semiconductor device, comprising:
- a first transistor;
- a dielectric layer over the first transistor;
- a second transistor over the first transistor and having an active region, wherein the dielectric layer is in contact with a bottom surface and sidewalls of the active region;
- a through via structure extending through the dielectric layer and electrically coupled to the first transistor, the through via structure having a top surface in a position higher than a top surface of the dielectric layer;
- and
- a metal-insulator-metal (MIM) structure over the second transistor and electrically coupled to the first transistor through the through via structure.
Dependencies are inferred from the claim text.