Semiconductor device and method of manufacturing the same

A semiconductor device, comprising:

• a channel layer, disposed over a substrate;
• a barrier layer, disposed over the channel layer;
• a dielectric layer, disposed over the barrier layer;
• a source, passing through the dielectric layer and the barrier layer and electrically connected with the channel layer;
• a drain, passing through the dielectric layer and the barrier layer and electrically connected with the channel layer;
• a gate, disposed over the dielectric layer between the source and the drain;
• an anode, passing through the dielectric layer, electrically connected with the barrier layer and electrically connected with the source by a first interconnect, wherein the anode and the barrier layer form a Schottky diode;
• a cathode, passing through the dielectric layer and the barrier layer, electrically connected with the channel layer and electrically connected with the drain by a second interconnect;
• and
• a two-dimensional electron gas (2DEG), disposed in the channel layer between the source and the drain and disposed in the channel layer between the source and the cathode.

A method of manufacturing a semiconductor device, comprising:

• sequentially forming a channel layer, a barrier layer and a dielectric layer over a front surface of a substrate;
• respectively forming a first region with a first conductive type and a second region with a second conductive type in the substrate, wherein the first conductive type is different from the second conductive type;
• forming a first conductive via in the dielectric layer, the barrier layer and the channel layer, such that a source is electrically connected with the first region by the first conductive via;
• forming a second conductive via in the dielectric layer, the barrier layer and the channel layer, such that a drain is electrically connected with the second region by the second conductive via;
• forming a gate on the dielectric layer between the source and the drain;
• and
• forming a two-dimensional electron gas (2DEG) in the channel layer between the source and the drain.