US 2019/0096875 A1 · SEMICONDUCTOR DEVICE INCLUDING ELECTROSTATIC DISCHARGE PROTECTION PATTERNS

Abstract

A semiconductor device can include a front-end-of-line region on a substrate, where the front-end-of-line region can include an electrostatic discharge protection circuit and an integrated circuit electrically connected to the electrostatic discharge protection circuit. A back-end-of-line region can be on the front-end-of-line region and an electrostatic discharge protection pattern can be on a scribe region of the substrate. The electrostatic discharge protection pattern can include a lower pattern extending horizontally and a side cross-sectional surface defined by a height and a width of the lower pattern, where the side cross-sectional surface can be exposed outside the back-end-of-line region. A via can be electrically connected to the lower pattern and extend perpendicularly to the substrate and an upper pattern can be electrically connected to the via.

Claims21

Dependent claims

A semiconductor device, comprising:

a front-end-of-line region on a substrate, the front-end-of-line region including an electrostatic discharge protection circuit and an integrated circuit electrically connected to the electrostatic discharge protection circuit;
a back-end-of-line region on the front-end-of-line region;
and
an electrostatic discharge protection pattern on a scribe region of the substrate,
wherein the electrostatic discharge protection pattern comprises:
a lower pattern extending horizontally and having a side cross-sectional surface defined by a height and a width of the lower pattern, the side cross-sectional surface exposed outside the back-end-of-line region;
a via electrically connected to the lower pattern and extending perpendicularly to the substrate;
and
an upper pattern electrically connected to the via.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor device including electrostatic discharge protection patterns

Life of this patent

Semiconductor device including electrostatic discharge protection patterns

Life of this patent

Abstract

Claims21