Esd network comprising variable impedance discharge path

A method, comprising:

• providing a semiconductor substrate of a semiconductor device, the semiconductor substrate having a first conductivity type;
• forming a gate of a depletion mode junction field effect transistor (JFET) in the semiconductor substrate, the gate having a second conductivity type, opposite from the first conductivity type, wherein a drain of the depletion mode JFET is contiguous with the semiconductor substrate;
• forming an electrical connection between the semiconductor substrate and a ground line of the semiconductor device;
• forming an electrical connection between a source of the depletion mode JFET and a protected line of the semiconductor device;
• and
• forming a triggered clamp in the semiconductor device, the triggered clamp being electrically coupled between the protected line and the ground line, and parallel with the depletion mode JFET.