US 2019/0096834 A1 · Bonding Pad Process with Protective Layer

Abstract

The present disclosure describes an bonding pad formation method that incorporates an tantalum (Ta) conductive layer to block mobile ionic charges generated during the aluminum-copper (AlCu) metal fill deposition. For example, the method includes forming one or more interconnect layers over a substrate and forming a dielectric over a top interconnect layer of the one or more interconnect layers. A first recess is formed in the dielectric to expose a line or a via from the top interconnect layer. A conductive layer is formed in the first recess to form a second recess that is smaller than the first recess. A barrier metal layer is formed in the second recess to form a third recess that is smaller than the second recess. A metal is formed to fill the third recess.

Claims25

Dependent claims

A method, comprising:

forming one or more interconnect layers over a substrate;
forming a dielectric over a top interconnect layer of the one or more interconnect layers;
forming a first recess in the dielectric to expose a line or a via from the top interconnect layer;
forming a conductive layer in the first recess to form a second recess that is smaller than the first recess;
forming a barrier metal layer in the second recess to form a third recess that is smaller than the second recess;
forming a metal to fill the third recess, while exposing top and side surfaces of the metal;
and
forming a passivation layer in contact with the top and side surfaces of the metal.

5 more elements

Dependencies are inferred from the claim text.

Bonding Pad Process with Protective Layer

Life of this patent

Bonding Pad Process with Protective Layer

Life of this patent

Abstract

Claims25