Method of forming a semiconductor device comprising top conductive pads

A method for manufacturing a semiconductor device, comprising:

• providing a substrate comprising semiconductor device elements;
• patterning a top conductive pad and an anti-reflective coating over the substrate, the anti-reflective coating disposed on the top conductive pad and comprising silicon oxynitride;
• forming at least one passivation film over the substrate and the anti-reflective coating;
• and
• etching the at least one passivation film and the anti-reflective coating using a plasma to form a recess therein so as to expose the top conductive pad, the plasma comprising a partially or fully fluorinated hydrocarbon.

A semiconductor device, comprising:

• a substrate comprising semiconductor device elements;
• a top conductive pad and an anti-reflective coating in a pattern formed over the substrate, the anti-reflective coating disposed on and partially covering the top conductive pad;
• and
• at least one passivation film formed over the substrate and the anti-reflective coating, the at least one passivation film comprising a first passivation film and a second passivation film disposed on the first passivation film,
• wherein a recess is defined by and within the at least one passivation film and the anti-reflective coating so as to expose a portion of the top conductive pad.