Semiconductor package structure

A semiconductor package structure comprising:

• a first insulating encapsulation;
• a second insulating encapsulation disposed on the first insulating encapsulation;
• an RFIC chip encapsulated by the first insulating encapsulation;
• a redistribution circuit structure disposed on the first insulating encapsulation and electrically connected to the RFIC chip;
• a first antenna structure disposed at a lateral side of the RFIC chip and electrically connected to the RFIC chip through the redistribution circuit structure, wherein the first antenna structure comprises a first conductor layer and a plurality of first patches spaced apart from the first conductor layer by the first insulating encapsulation and the second insulating encapsulation;
• and
• a second antenna structure disposed on the RFIC chip and electrically connected to the RFIC chip through the redistribution circuit structure, wherein the second antenna structure comprises a second conductor layer and a plurality of second patches spaced apart from the second conductor layer by the second insulating encapsulation, and the second conductor layer is located between the RFIC chip and the second patches.

A semiconductor package structure comprising:

• an insulating encapsulation;
• an RFIC chip embedded in the insulating encapsulation;
• an antenna structure disposed at a lateral side of the RFIC chip, electrically connected to the RFIC chip, and comprising a conductor layer and a plurality of patches opposite to the conductor layer;
• and
• an isolation layer disposed between the conductor layer and the patches and embedded in the insulating encapsulation, wherein a dissipation factor of the isolation layer is lower than that of the insulating encapsulation.