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US 2019/0096820 A1Published application
Hardened interlayer dielectric layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJoung-Wei LIOU, Greg Huang
Life of this patent
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Abstract
The present disclosure relates to a semiconductor device and a manufacturing method thereof, and more particularly to an interlayer dielectric (ILD) layer in a semiconductor device. In one example, the ILD layer is over a substrate and includes a dielectric with a dielectric constant of less than about 3.3 and a hardness of at least about 3 GPa. The semiconductor device also includes an interconnect formed in the ILD layer.
Claims20
A semiconductor device, comprising:
- a substrate;
- a first interlayer dielectric (ILD) layer over the substrate, wherein the first ILD layer comprises a first dielectric with a dielectric constant of less than about 3.3 and a hardness of at least about 3 GPa;
- and
- an interconnect formed in the first ILD layer.
1 more element
A method for forming a semiconductor device, comprising:
- providing a substrate;
- depositing an interlayer dielectric (ILD) layer over the substrate, wherein the ILD layer comprises a dielectric with a dielectric constant of less than about 3.3 and a hardness of at least about 3 GPa;
- etching an opening in the ILD layer;
- and
- depositing an interconnect in the opening.
2 more elements
A method for forming a semiconductor device, comprising:
- providing a substrate;
- depositing an interlayer dielectric (ILD) layer over the substrate, comprising:
- introducing a precursor at a first flow rate and an oxygen gas at a second flow rate into a chamber, wherein a ratio between the first flow rate and the second flow rate is at least about 25, and a total flow rate of the first and second flow rates is less than about 5000 sccm;
- and
- providing a radio frequency (RF) discharge having a power of at most about 600 W in the chamber;
- etching an opening in the ILD layer;
- and
- depositing an interconnect in the opening.
5 more elements
Dependencies are inferred from the claim text.