Metal interconnect structure and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsShih-Hsien Chen, Meng-Jun Wang, Ting-Chun Wang, Chih-Sheng Chang
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Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first inter-metal dielectric (IMD) layer thereon; forming a first metal interconnection and a second metal interconnection in the first IMD layer; removing part of the first IMD layer to form a recess between the first metal interconnection and the second metal interconnection; performing a curing process; and forming a second IMD layer on the first metal interconnection and the second metal interconnection.
Claims19
A method for fabricating semiconductor device, comprising:
- providing a substrate having a first inter-metal dielectric (IMD) layer thereon;
- forming a first metal interconnection and a second metal interconnection in the first IMD layer;
- removing part of the first IMD layer to form a recess between the first metal interconnection and the second metal interconnection;
- performing a curing process after removing part of the first IMD layer to form the recess;
- and
- forming a second IMD layer on the first metal interconnection and the second metal interconnection after performing the curing process.
A semiconductor device, comprising:
- a substrate having a first inter-metal dielectric (IMD) layer thereon;
- a first metal interconnection and a second metal interconnection in the first IMD layer;
- a first cap layer on the first IMD layer;
- a second cap layer on the first metal interconnection and the second metal interconnection;
- a second IMD layer on the second cap layer;
- and
- an air gap between the first metal interconnection and the second metal interconnection, and the air gap is located within each of the second IMD layer and the second cap layer, wherein the air gap extends from the second cap layer into the second IMD layer, wherein a vertex of the air gap is higher than a top surface of the first metal interconnection.
(canceled)
17-18. (canceled)
Dependencies are inferred from the claim text.