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US 2019/0096818 A1Published application
Manufacturing method of wiring structure and wiring structure
AssigneeFujitsu Limited
InventorMotonobu SATO
Life of this patent
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Abstract
A trench is formed in an insulating film, carbon is formed on the insulating film to fill an inside of the trench, a catalytic material is formed on the carbon, heat treatment is performed on the carbon to turn the carbon into graphenes which are stacked in a plurality of layers, and the catalytic material and a part of the graphenes on the insulating film are removed to make the graphenes remain only in the trench.
Claims7
A manufacturing method of a wiring structure, comprising:
- forming a trench in an insulating film;
- forming carbon on the insulating film to fill an inside of the trench;
- forming a catalytic material on the carbon;
- performing heat treatment on the carbon to turn the carbon into graphenes which are stacked in a plurality of layers;
- and
- removing the catalytic material and a part of the graphenes on the insulating film, to make the graphenes remain only in the trench.
3 more elements
7-11. (canceled)
Dependencies are inferred from the claim text.