Interconnection structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Chen CHAN, Shin-Yi YANG, Ming-Han LEE
Life of this patent
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Abstract
A structure includes a non-insulator structure, an etch stop layer, a dielectric layer, a conductive feature, and a first diffusion barrier layer. The etch stop layer is over the non-insulator structure. The dielectric layer is over the etch stop layer. The conductive feature is in the dielectric layer. The first diffusion barrier layer wraps around the conductive feature, the first diffusion barrier layer has a base portion between the non-insulator structure and the conductive feature, and the first diffusion barrier layer has a lateral extension from the base portion of the first diffusion barrier layer.
Claims20
A structure, comprising:
- a non-insulator structure;
- an etch stop layer over the non-insulator structure;
- a dielectric layer over the etch stop layer;
- a conductive feature in the dielectric layer;
- and
- a first diffusion barrier layer wrapping around the conductive feature, wherein the first diffusion barrier layer has a base portion between the non-insulator structure and the conductive feature, and the first diffusion barrier layer has a lateral extension from the base portion of the first diffusion barrier layer.
A structure, comprising:
- a non-insulator structure;
- an etch stop layer over the non-insulator structure;
- a dielectric layer over the etch stop layer;
- a conductive feature in the dielectric layer;
- and
- a diffusion barrier layer wrapping around the conductive feature, wherein the diffusion barrier layer has a lateral extension tapering away from the conductive feature.
A structure, comprising:
- a non-insulator structure;
- a dielectric layer over the non-insulator structure;
- a conductive feature in the dielectric layer;
- a liner layer wrapping around the conductive feature;
- a first diffusion barrier layer over a sidewall of the liner layer;
- and
- a second diffusion barrier layer having a first portion between the liner layer and the non-insulator structure and a second portion between the first diffusion barrier layer and the dielectric layer, wherein the liner layer is in contact with the first portion of the second diffusion barrier layer.
Dependencies are inferred from the claim text.