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US 2019/0096804 A1Published application
Semiconductor devices and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHon-Lin Huang, Chen-Shien Chen, Chin-Yu Ku, Kuan-Chih Huang, Wei-Li Huang
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Abstract
Semiconductor devices and methods of forming the same are provided. One of the semiconductor devices comprises a conductive layer, a first dielectric layer disposed over the conductive layer, a magnetic layer disposed over the first dielectric layer, and a plurality of tantalum layers and a plurality of tantalum oxide layers alternately disposed between the magnetic layer and the first dielectric layer.
Claims20
A semiconductor device, comprising:
- a conductive layer;
- a first dielectric layer disposed over the conductive layer;
- a magnetic layer disposed over the first dielectric layer;
- and
- a plurality of tantalum layers and a plurality of tantalum oxide layers, alternately disposed between the magnetic layer and the first dielectric layer.
2 more elements
A semiconductor device, comprising:
- a conductive layer;
- a first dielectric layer disposed over the conductive layer;
- a magnetic layer disposed over the first dielectric layer;
- a second dielectric layer between the first dielectric layer and the magnetic layer;
- and
- a plurality of unit layers between the magnetic layer and the second dielectric layer, wherein each of the plurality of unit layers comprises a tantalum layer and a tantalum oxide layer, and an included angle between a bottom surface and a sidewall of the plurality of unit layers is substantially less than an included angle between a bottom surface and a sidewall of the second dielectric layer.
3 more elements
A method of forming a semiconductor device, comprising:
- depositing a first dielectric layer on a conductive layer;
- performing a plurality of cycles to form a plurality of tantalum layers and a plurality of tantalum oxide layers over the first dielectric layer, each cycle comprising depositing a tantalum layer and oxidizing the tantalum layer to form a tantalum oxide layer;
- depositing a magnetic layer over the plurality of tantalum layers and the plurality of tantalum oxide layers;
- patterning the magnetic layer;
- and
- patterning the plurality of tantalum layers and the plurality of tantalum oxide layers by using the patterned magnetic layer as a mask.
3 more elements
Dependencies are inferred from the claim text.