Dense Redistribution Layers in Semiconductor Packages and Methods of Forming the Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Hung-Jui Kuo, Hui-Jung Tsai
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Hung-Jui Kuo, Hui-Jung Tsai
Estimating the term…
A method embodiment includes forming a patterned first photo resist over a seed layer. A first opening in the patterned first photo resist exposes the seed layer. The method further includes plating a first conductive material in the first opening on the seed layer, removing the patterned first photo resist, and after removing the patterned first photo resist, forming a patterned second photo resist over the first conductive material. A second opening in the patterned second photo resist exposes a portion of the first conductive material. The method further includes plating a second conductive material in the second opening on the first conductive material, removing the patterned second photo resist, and after removing the patterned second photo resist, depositing a dielectric layer around the first conductive material and the second conductive material.
A semiconductor package comprising:
The semiconductor package of claim, wherein the conductive line is directly contacting the encapsulant.
A semiconductor package comprising:
A semiconductor package comprising:
Dependencies are inferred from the claim text.