Semiconductor device and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Hao CHANG, Jia-Chuan YOU, Yu-Ming LIN, Chih-Hao WANG, Wai-Yi LIEN
Life of this patent
Estimating the term…
Abstract
A method of forming a semiconductor device includes forming an ILD structure over a source/drain region, forming a source/drain contact in the ILD structure and over the source/drain region, removing a portion of the source/drain contact such that a hole is formed in the ILD structure and over a remaining portion of the source/drain contact, forming a hole liner lining a sidewall of the hole, and forming a conductive structure in the hole.
Claims21
1-17. (canceled)
A semiconductor device, comprising:
- a semiconductor substrate having a source/drain region;
- a source/drain contact over the source/drain region;
- a conductive structure over the source/drain contact;
- an interlayer dielectric (ILD) layer surrounding the conductive structure;
- and
- a dielectric liner between the ILD layer and the conductive structure and over the source/drain contact.
A semiconductor device, comprising:
- a semiconductor substrate having a source/drain region and a channel region;
- a source/drain contact over the source/drain region;
- a conductive structure over the source/drain contact;
- a gate electrode over the channel region;
- and
- a dielectric liner around the conductive structure, wherein the dielectric liner is over the source/drain contact and terminates before reaching the gate electrode.
A semiconductor device, comprising:
- a semiconductor substrate having a source/drain region and a channel region;
- a source/drain contact over the source/drain region;
- a conductive structure over the source/drain contact;
- and
- a gate electrode over the channel region, wherein a top surface of the source/drain contact is lower than a top surface of the gate electrode.
Dependencies are inferred from the claim text.