US 2019/0096758 A1Published application

Semiconductor Chip Including Self-Aligned, Back-Side Conductive Layer and Method for Making the Same

AssigneeInfineon Technologies AG

InventorsIngo Muri, Bernhard Goller

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Abstract

A method for manufacturing a semiconductor device includes: partially dicing a substrate wafer arrangement having a plurality of semiconductor chips, wherein the partial dicing forms trenches around the semiconductor chips on a front-side of the substrate wafer arrangement, the depth being greater than a target thickness of a semiconductor chip; filling the trenches with a polymer material to form a polymer structure; first thinning of the back-side to expose portions of the polymer structure; forming a conductive layer on the back-side of the substrate wafer arrangement so that the exposed portions of the polymer structure are covered; second thinning of the back-side to form insular islands of conductive material, the insular islands separated from each other by the polymer structure, each insular island corresponding to a respective one of the semiconductor chips; and dicing the substrate wafer arrangement along the polymer structure.

Claims18

Dependent claims

A method for manufacturing a semiconductor device, the method comprising:

partially dicing a substrate wafer arrangement comprising a front-side and a back-side that is opposite the front-side, the substrate wafer arrangement further comprising a plurality of semiconductor chips, wherein the partial dicing forms trenches having a depth around the plurality of semiconductor chips on the front-side of the substrate wafer arrangement, the depth being greater than a target thickness of the plurality of semiconductor chips;
filling the trenches with a polymer material to form a polymer structure;
first thinning of the back-side of the substrate wafer arrangement to expose portions of the polymer structure;
forming a conductive layer on the back-side of the substrate wafer arrangement so that the exposed portions of the polymer structure are covered;
second thinning of the back-side of the substrate wafer arrangement to form insular islands of conductive material from the conductive layer, the insular islands separated from each other by the polymer structure, each insular island corresponding to a respective one of the plurality of semiconductor chips;
and
dicing the substrate wafer arrangement along the polymer structure to form individual semiconductor chips.

4 more elements

A semiconductor device, comprising:

a substrate layer having a first main side and a second main side opposite the first main side, the first main side being a front-side and the second main side being a back-side;
one or more electrical components formed in or over the front-side of the substrate layer;
a back-side conductive layer disposed on the back-side of the substrate layer;
and
a polymer structure extending vertically at least from the front-side of the substrate layer to a back-side of the back-side conductive layer and surrounding edges of the substrate layer and edges of the back-side conductive layer.

2 more elements

Dependencies are inferred from the claim text.