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US 2019/0096754 A1Published application
Etch profile control of interconnect structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAllen KE, Yi-Wei CHIU, Hung Jui CHANG, Yu-Wei KUO
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Abstract
A method of forming a semiconductor structure includes forming an etch stop layer on a substrate, forming a metal oxide layer over the etch stop layer, and forming an interlayer dielectric (ILD) layer on the metal oxide layer. The method further includes forming a trench etch opening over the ILD layer, forming a capping layer over the trench etch opening, and forming a via etch opening over the capping layer.
Claims20
An integrated circuit, comprising:
- a semiconductor device comprising contact structures;
- and
- an interconnect structure coupled to the contact structures, the interconnect structure comprising:
- an etch stop layer positioned over the semiconductor device;
- a metal oxide layer positioned over the etch stop layer;
- an interlayer dielectric (ILD) layer positioned on the metal oxide layer;
- and
- a conductive via positioned within the metal oxide layer and the ILD layer.
5 more elements
An interconnect structure, comprising:
- first conductive structures embedded in a first dielectric over a substrate;
- a metal containing layer disposed over the first dielectric;
- a second dielectric disposed on the metal containing layer;
- second conductive structures in physical contact with the first conductive structures and partially within the metal containing layer, and the second dielectric;
- and
- third conductive structures embedded in the second dielectric and in physical contact with the second conductive structures.
3 more elements
An integrated circuit, comprising:
- a dielectric layer with first conductive structures therein over a substrate;
- an interconnect layer disposed on the dielectric layer, wherein the interconnect layer comprises:
- a stack of one or more layers comprising a metal oxide, a metal nitride, a metal carbide, or combinations thereof disposed over the dielectric layer;
- second conductive structures in physical contact with the first conductive structures;
- and
- third conductive structures in physical contact with the second conductive structures.
3 more elements
Dependencies are inferred from the claim text.